Effect of annealing temperature on structural, electrical, and UV sensingcharacteristics of n-ZnO/p-Si heterojunction photodiodes
Author:
Publisher
The Scientific and Technological Research Council of Turkey (TUBITAK-ULAKBIM)
Subject
General Physics and Astronomy
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Multifunctional Three-in-One Sensor on t-ZnO for Ultraviolet and VOC Sensing for Bioengineering Applications;Biosensors;2024-06-05
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3. Some Properties of Semiconductor-Ferroelectric Structures;East European Journal of Physics;2023-06-02
4. Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection;Solid-State Electronics;2022-02
5. Improving light-sensing behavior of Cu/n-Si photodiode with Human Serum Albumin: Microelectronic and dielectric characterization;Optik;2021-09
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