An A0 mode Lamb-wave AlN resonator on SOI substrate with vertically arranged double-electrodes

Author:

Cao Haichao,Lu Xianzheng,Ren HaoORCID

Abstract

Abstract In this paper, a novel vertically arranged double-electrodes A0 mode Lamb-wave AlN resonator on SOI substrate with a high electromechanical coupling coefficient and high figure of merit (FOM) is reported. The AlN resonator has a sandwich structure with aluminum and N-type doped silicon as electrode layers and a 500 nm thick AlN film as piezoelectric layer. The resonator has only two electrodes vertically arranged rather than horizontal interdigitated (IDT) electrodes which is common in conventional Lamb-wave resonators. The electrode gaps for the vertically arranged double-electrodes resonators are defined by AlN layer thickness rather than by photolithography for lateral field excitation resonators, which results in higher electric field strength and higher electromechanical coupling efficient ( k t 2 ). Compared with conventional thickness field excitation (TFE) resonators with floating bottom electrodes, the vertically arranged double-electrodes resonators have higher electric field strength as the potential difference is larger between the top electrode and bottom electrode than that between the IDT electrodes and floating electrode. As a result, a higher electromechanical coupling coefficient is achieved. Furthermore, the resonant frequency of the vertically arranged double-electrodes resonator presented in this work can be defined by photolithography by controlling the width of the silicon layer. The k t 2 of the vertically arranged double-electrodes resonator calculated from the measurement results of admittance versus frequency by numerically fitting with the Butterworth Van Dyke model shows an increase by 3.85 times, from 0.073% to 0.281% compared with conventional TFE resonators, and the FOM also increases by three times, from 2.66 to 7.99. This work provides a new structure to design future AlN Lamb-wave resonators on SOI substrate.

Funder

Yangfan Project

National Natural Science Foundation of China

ShanghaiTech Start-up Project

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Micromachined piezoelectric Lamb wave resonators: a review;Journal of Micromechanics and Microengineering;2023-09-22

2. An One-port A2 Mode AlN Lamb Wave Resonator Based on SOI Substrate;2023 IEEE 18th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS);2023-05-14

3. An 8-inch commercial aluminum nitride MEMS platform for the co-existence of Lamb wave and film bulk acoustic wave resonators;Journal of Micromechanics and Microengineering;2023-03-16

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