Establishment and verification of resistance temperature coefficient model of P-type non-uniformly doped resistance

Abstract

Abstract In this paper, a first-order average temperature coefficient of resistance ( TC R ave ) calculation model is established and analyzed based on the distribution of piezoresistive doping concentration in bulk silicon. Furthermore, by extracting the experimental results of the first-order TC R ave of multiple research groups and combining the first-order TCR ave calculation model, the new mobility model in the concentration range of piezoresistance (1 × 1018–1 × 1020 at cm−3) is obtained by fitting. The first-order TC R ave of five implantation concentrations under the same process is tested. The results show that the error between the first-order TC R ave obtained based on the new mobility calculation model and the test results is within 5%. However, the first-order TC R ave based on the Arora mobility model has a deviation of 104.6% under the implantation condition of 3.75 × 1015 at cm−2. At the same time, the effects of different annealing temperatures and time on the first-order TC R ave at the implantation concentration of 8.5 × 1013 at cm−2 are compared. The results show that a higher annealing temperature or longer annealing time is not conducive to reducing the first-order TC R ave , but the difference is small.