Modeling the elastic properties of the ternary III–V alloys InGaAs, InAlAs and GaAsSb using Tersoff potentials for binary compounds
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/28/i=8/a=085011/pdf
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1. Recent progress in computer‐aided materials design for compound semiconductors
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1. Thermal conductivity of ternary III-V semiconductor alloys: The role of mass difference and long-range order;Journal of Applied Physics;2018-03-28
2. Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures;CrystEngComm;2017
3. Atomistic modeling of interfaces in III–V semiconductor superlattices;physica status solidi (b);2016-02-10
4. Thermal expansion of III–V materials in atomistic models using empirical Tersoff potentials;Electronics Letters;2015-09
5. Energetics of neutral Si dopants in InGaAs: Anab initioand semiempirical Tersoff model study;Physical Review B;2015-03-16
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