Influence of source coupling on the programming and degradation mechanisms of split-gate flash memory devices-Reference-Cited by-同舟云学术

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Influence of source coupling on the programming and degradation mechanisms of split-gate flash memory devices

Published:1999-12-01 Issue:12 Volume:14 Page:1021-1025
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Huang K-C,Fang Y-K,Yaung D-N,Chen C-W,Sung H-C,Kuo D,Wang C S,Liang M-S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. A 90-ns one-million erase/program cycle 1-Mbit flash memory

2. A 128 K flash EEPROM using double-polysilicon technology

3. A 512-kb flash EEPROM embedded in a 32-b microcontroller

4. A source-side injection erasable programmable read-only-memory (SI-EPROM) device

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Source Junctions on the Performance and Cycling-Induced Degradation of Split-Gate Flash Memory;Japanese Journal of Applied Physics;2010-07-20

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