10.1088/0268-1242/13/8/005-Reference-Cited by-同舟云学术

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10.1088/0268-1242/13/8/005

Published:1998-08 Issue:8 Volume:13 Page:858-863
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Carlo Aldo Di,Lugli Paolo,Canali Claudio,Malik Roger,Manfredi Manfredo,Neviani Andrea,Zanoni Enrico,Zandler Günther

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET's

2. Impact ionization and light emission in AlGaAs/GaAs HEMT's

3. Hot-carrier luminescence in Si

4. Hot‐electron electroluminescence in AlGaAs/GaAs heterojunction bipolar transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo simulation of excess noise in heterojunction avalanche photodetector;Optical and Quantum Electronics;2008-04

2. Gunn oscillations in GaN channels;Semiconductor Science and Technology;2004-03-05

3. Impact ionization probabilities as functions of two-dimensional space and time;Journal of Applied Physics;2001-03

4. Impact ionization in compound semiconductor devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

5. Characterization of light emission from SiGe heterojunction bipolar transistor for photon emission microscopy applications;2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.

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