The influence of the early stage of ZnSe growth on GaAs(001) on the defect-related luminescence-Reference-Cited by-同舟云学术

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The influence of the early stage of ZnSe growth on GaAs(001) on the defect-related luminescence

Published:1998-08-01 Issue:8 Volume:13 Page:921-926
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Buda B,Wang C,Wrede W,Leifeld O,As D J,Schikora D,Lischka K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe-based films grown on GaAs

2. Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II‐VI heterostructures and devices

3. Structural study of defects induced during current injection to II–VI blue light emitter

4. Degradation of II‐VI based blue‐green light emitters

5. Structural properties of the ZnSe/GaAs system grown by molecular‐beam epitaxy

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1. Optimization of the Growth of the Van der Waals Materials Bi2Se3 and (Bi0.5In0.5)2Se3 by Molecular Beam Epitaxy;Crystal Growth & Design;2021-10-29

2. Ga-catalyzed growth of ZnSe nanowires and the cathodoluminescence and electric transport properties of individual nanowire;Materials Chemistry and Physics;2012-04

3. Sublimation sandwich route to ultralong zinc-blende ZnSe nanowires and the cathodoluminescence properties of individual nanowires;Journal of Alloys and Compounds;2011-02

4. Growth of ZnSe(1−x)Tex epilayers by isothermal closed space sublimation;Journal of Applied Physics;2010-05-15

5. Enhancement of band edge luminescence in ZnSe nanowires;Journal of Applied Physics;2006-10-15

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