An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy

Published:2000-06-27 Issue:8 Volume:15 Page:789-793
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Bell A,Harrison I,Cheng T S,Korakakis D,Foxon C T,Novikov S,Ber B Ya,Kudriavtsev Y A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy

2. Photoluminescence studies of band‐edge transitions in GaN epitaxial layers grown by plasma‐assisted molecular beam epitaxy

3. Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

4. Low-temperature luminescence study of GaN films grown by MBE

5. Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

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2. Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers;Journal of Crystal Growth;2016-11

3. Point Defects in GaN;Semiconductors and Semimetals;2015

4. Growth and characterization of a-plane (110) GaN films on (010) LiGaO2 substrate by chemical vapor deposition;Journal of Crystal Growth;2013-01

5. Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well;Applied Surface Science;2010-09

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