MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors-Reference-Cited by-同舟云学术

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MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors

Published:2013-08-20 Issue:10 Volume:28 Page:105017
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Madejczyk P,Gawron W,Martyniuk P,Kębłowski A,Piotrowski A,Pawluczyk J,Pusz W,Kowalewski A,Piotrowski J,Rogalski A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=10/a=105017/pdf

Reference31 articles.

1. HOT infrared photodetectors

2. High-Operating-Temperature Infrared Photodetectors

3. Nonequilibrium devices for infra-red detection

4. Numerical analysis of longwavelength extracted photodiodes

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1. Low-frequency noise and impedance measurements in Auger suppressed LWIR N+p(π)P+n+ HgCdTe detector;Infrared Physics & Technology;2024-03

2. Indium composition effects on extended short-wave infrared photodetector performance;Journal of the Korean Physical Society;2023-12-14

3. Status and Progress of Research on HgCdTe Photovoltaic Infrared Detectors;Springer Proceedings in Physics;2023

4. Raman scattering of low energy HgCdTe phonons;Infrared Physics & Technology;2022-12

5. Dot size variability induced changes in the optical absorption spectra of interdiffused quantum dot systems;Applied Physics A;2019-10-24

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