Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling-Reference-Cited by-同舟云学术

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Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Published:2009-01-21 Issue:2 Volume:24 Page:025031
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Pociask M,Izhnin I I,Izhnin A I,Dvoretsky S A,Mikhailov N N,Sidorov Yu G,Varavin V S,Mynbaev K D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Imaging photovoltaic infrared CdHgTe detectors

2. Development of Molecular Beam Epitaxially Grown Hg1−x Cd x Te for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays

3. Modification of Hg1−x CdxTe properties by low-energy ions

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1. Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022;Reviews on Advanced Materials and Technologies;2022

2. Mobility spectrum analysis of HgCdTe epitaxial layers grown by metalorganic chemical vapour deposition;12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods;2017-09-01

3. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies;Opto-Electronics Review;2017-06

4. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy;Russian Physics Journal;2016-07

5. Long-term stability of electron concentration in HgCdTe-based p – n junctions fabricated with ion etching;Infrared Physics & Technology;2015-11

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