Effects of Si3N4passivation on the dc and RF characteristics of metamorphic high-electron-mobility transistors depending on the gate-recess structures-Reference-Cited by-同舟云学术

Effects of Si3N4passivation on the dc and RF characteristics of metamorphic high-electron-mobility transistors depending on the gate-recess structures

Published:2009-01-20 Issue:2 Volume:24 Page:025027
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Oh J H,Han M,Baek Y H,Moon S W,Rhee J K,Kim S D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

2. InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance

3. Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels design

4. Enhanced power performance of enhancement-mode Al/sub 0.5/Ga/sub 0.5/As/In/sub 0.15/Ga/sub 0.85/As pHEMTs using a low-k BCB passivation

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1. A study of gate recess-width control of InP-based HEMTs by a Si3N4 passivation layer;Microelectronic Engineering;2022-01

2. High power density AlGaAs/InGaAs/GaAs PHEMTs using an optimised manufacturing process for Ka-band applications;Microelectronic Engineering;2014-01

3. Effects of double passivation for optimize DC properties in gamma-gate AlGaN/GaN high electron mobility transistor by plasma enhanced chemical vapor deposition;Thin Solid Films;2012-04

4. Highly reliable Si3N4–HfO2 stacked heterostructure to fully flexible poly-(3-hexylthiophene) thin-film transistor;Organic Electronics;2011-08