Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants
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Published:2000-02-01
Issue:2
Volume:15
Page:233-233
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ISSN:0268-1242
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Container-title:Semiconductor Science and Technology
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language:
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Short-container-title:Semicond. Sci. Technol.
Author:
Gérard F,Theys B,Lusson A,Jomard F,Dolin C,Rao E V K,Benchimol J L
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials