AlGaAs/GaAs modulation-doped structures grown on a Be-ion-implanted GaAs back gate
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Mobility Modulation of the Two-Dimensional Electron Gas Via Controlled Deformation of the Electron Wave Function in Selectively Doped AlGaAs-GaAs Heterojunctions
2. Wave function deformation and mobility of a two‐dimensional electron gas in a backgated GaAs‐AlGaAs heterostructure
3. Transition from one- to two-subband occupancy in the 2DEG of back-gated modulation-doped GaAs-AlxGa1−xAs heterostructures
4. Tunneling between two-dimensional electron gases in a strong magnetic field
5. The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Combined therapy with saquinavir, ritonavir and stavudine in moderately to severely immunosuppressed HIV-infected protease inhibitor-naive patients;HIV Medicine;2001-01
2. AlGaAs/GaAs heterostructures grown on a focused-Be-ion-beam written backgate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
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