Control of excited electron state populations in double-barrier resonant tunnelling structures-Reference-Cited by-同舟云学术

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Control of excited electron state populations in double-barrier resonant tunnelling structures

Published:1994-05-01 Issue:5S Volume:9 Page:533-536
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Buckle P D,Cockburn J W,Teissier R J,Willcox A R K,Whittaker D M,Skolnick M S,Smith G W,Grey R,Hill G,Pate M A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=5S/a=036/pdf

Reference12 articles.

1. Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State Photoluminescence

2. Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields

3. Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures

4. Charge accumulation in a double-barrier resonant-tunneling structure studied by photoluminescence and photoluminescence-excitation spectroscopy

5. Sequential versus coherent tunneling in double-barrier diodes investigated by differential absorption spectroscopy

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast electro-optical switching of single-barrier tunneling LEDs;SPIE Proceedings;2001-03-08

2. High-Speed Switching of Double-Barrier Resonant-Tunneling Light-Emitting Diodes Investigated by Picosecond Electroluminescence Measurements;Materials Science Forum;1998-12

3. Inversion of electron sub-band population in a GaAs/AlGaAs triple barrier tunnelling structure;Solid-State Electronics;1998-07

4. Photoluminescence spectroscopy of intersubband population inversion in aGaAs/AlxGa1−xAstriple-barrier tunneling structure;Physical Review B;1998-03-15

5. Gigahertz microcavity light emitters using resonant tunneling diodes;Materials Science and Engineering: B;1998-02

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