Effect of chemical surface treatment on p-layer formation in the interface region of directly bonded Si wafers-Reference-Cited by-同舟云学术

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Effect of chemical surface treatment on p-layer formation in the interface region of directly bonded Si wafers

Published:1993-09-01 Issue:9 Volume:8 Page:1700-1705
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Astrova E V,Grekhov I V,Kozlov V A,Kropotov G I,Lebedev A A,Patsekin A V,Voronkov V B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=9/a=004/pdf

Reference31 articles.

1. Wafer bonding for silicon‐on‐insulator technologies

2. Silicon‐to‐silicon direct bonding method

3. Bonding of silicon wafers for silicon‐on‐insulator

4. シリコン接着ウェーハの実用化

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical properties of Si/SiO2/Si structures produced by direct bonding of pre-oxidized silicon wafers;Microelectronic Engineering;2003-04

2. Electrical characterization of interfaces in unitype directly bonded silicon wafers;Materials Science and Engineering: B;2002-04

3. Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries;Solid State Phenomena;2001-11

4. Process induced deep-level defects in high purity silicon;Semiconductor Science and Technology;1998-05-01

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