A theoretical analysis of absorption and refractive index changes in optically excited In1-xGaxSb
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=9/a=003/pdf
Reference28 articles.
1. Lasers And Avalanche Photodiodes For IR Fiber Optics In The 2-2,5 µm Spectral Range
2. Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy
3. Growth and characterization of In1−xGaxSb by metalorganic magnetron sputtering
4. Calculation of the carrier-induced refractive index change in InSb
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3. Photoexcited-carrier-induced refractive index change in small bandgap semiconductors;Journal of the Optical Society of America B;2006-11-01
4. Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects of free carriers;Journal of Applied Physics;1997-02-15
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