EPR and ENDOR observation of orthorhombic Au-Li and Pt-Li pairs in silicon: On the problem of the observation of isolated AuSi0with magnetic resonance-Reference-Cited by-同舟云学术

EPR and ENDOR observation of orthorhombic Au-Li and Pt-Li pairs in silicon: On the problem of the observation of isolated AuSi0with magnetic resonance

Published:1995-07-01 Issue:7 Volume:10 Page:977-982
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Greulich-Weber S,Alteheld P,Reinke J,Weihrich H,Overhof H,Spaeth J -M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. An explanation for the missing EPR from the isolated substitutional gold impurity in silicon

2. Vacancy-model interpretation of EPR spectrum of Si:Pt−

3. EPR investigation ofPt−in silicon

4. Electronic and magnetic structure of 3d–transition-metal point defects in silicon calculated from first principles

5. Electronic structure of copper, silver, and gold impurities in silicon

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1. Theoretical ab initio Calculations of Hyperfine Interactions;Point Defects in Semiconductors and Insulators;2003

2. Pt and Li complexes in silicon. 99-07-22 16.52;Physica B: Condensed Matter;1999-12

3. Magnetic moments of substitutional gold in silicon;Journal of Physics: Condensed Matter;1997-06-09

4. Silicon, paramagnetic centers: principal values of g-tensors of tetragonal centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

5. Silicon, paramagnetic centers: principal values of g-tensors of orthorhombic-I centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements