Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers

Published:2010-06-04 Issue:7 Volume:25 Page:075003
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Larramendi E M,Berth G,Wiedemeier V,Hüsch K-P,Zrenner A,Woggon U,Tschumak E,Lischka K,Schikora D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Raman scattering study of the properties and removal of excess Te on CdTe surfaces

2. Raman scattering studies of monolayer-thickness oxide and tellurium films on PbSnTe

3. Raman detection of tellurium layers on surfaces of CdTe

4. The Raman Spectrum of Amorphous Tellurium

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photon–carrier–spin coupling in a one-dimensional Ni(II)-doped ZnTe nanostructure;Nanotechnology;2024-07-15

2. Investigations on near band-edge optical excitation response in bulk ZnTe single crystals;Applied Physics A;2024-01-16

3. Elucidating the Degradation Mechanisms in Silicon Telluride through Multimodal Characterization;The Journal of Physical Chemistry C;2023-07-05

4. Raman study of silicon telluride nanoplates and their degradation;Nanotechnology;2022-04-07

5. Combinatorial study of the structural, optical, and electrical properties of low temperature deposited Cd1-Zn Te (0 ≤ x ≤ 1) thin films by MOCVD;Applied Surface Science;2021-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3