MBE growth of the (Zn,Cd)(Se,Te) system for wide-bandgap heterostructure lasers-Reference-Cited by-同舟云学术

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MBE growth of the (Zn,Cd)(Se,Te) system for wide-bandgap heterostructure lasers

Published:1991-09-01 Issue:9A Volume:6 Page:A8-A13
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Tamargo M C,Brasil M J S P,Nahory R E,Martin R J,Weaver A L,Gilchrist H L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=9A/a=002/pdf

Reference22 articles.

1. Metalorganic vapor phase epitaxy of low‐resistivityp‐type ZnSe

2. Growth ofp‐type ZnSe:Li by molecular beam epitaxy

3. ZnSe light‐emitting diodes

4. Nitrogen-doped p-type ZnSe films grown by MOVPE

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5. Investigation of structural, mechanical and optoelectronic properties of cubic Cd1−x−yZnxHgySe quaternary alloys through first-principle calculations;Bulletin of Materials Science;2022-02-10

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