The applicability of analytical-band Monte Carlo for modelling high field electron transport in GaAs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
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1. Analysis of notch-δ-doped GaAs-based Gunn diodes;Journal of Physics D: Applied Physics;2022-07-06
2. THz radiation by quasi-ballistic electron reflection in AlSb/InAs/AlSb heterostructures;EPL (Europhysics Letters);2015-02-01
3. Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations;Applied Physics Letters;2008-02-11
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