Metal–insulator transition in Si/SiGe heterostructures: mobility, spin polarization and Dingle temperature
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Electronic properties of two-dimensional systems
2. Peak Mobility of Silicon Metal-Oxide-Semiconductor Systems
3. Localization and screening anomalies in two-dimensional systems
4. Metal–insulator transition in two-dimensional electron systems
5. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
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1. Materials and device simulations for silicon qubit design and optimization;MRS Bulletin;2021-07
2. Light effective hole mass in undoped Ge/SiGe quantum wells;Physical Review B;2019-07-31
3. Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer;Applied Physics Letters;2014-06-16
4. Transport properties of a quasi-two-dimensional electron gas in a SiGe/Si/SiGe quantum well including temperature and magnetic field effects;Superlattices and Microstructures;2013-12
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