Influence of the current density and internal electric field on the exclusion of excess carriers in long semiconductor samples
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/10/i=4/a=003/pdf
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1. Carrier Extraction in Germanium
2. Exclusion Effect in Semiconductors with Non-Injecting Contacts
3. The l–h junction as an element of the semiconductor device
4. The characteristics of minority-carrier exclusion in narrow direct gap semiconductors
5. Non-Equilibrium Devices For Infrared Detection
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1. The transient exclusion effect in intrinsic semiconductors;Semiconductor Science and Technology;2002-09-02
2. Exclusion in the semiconductor p+-p-p+structure under conditions of a temperature gradient;Semiconductor Science and Technology;1998-01-01
3. The transport of excess current carriers in an inhomogeneous semiconductor with position-dependent band gap;Semiconductor Science and Technology;1998-01-01
4. Accumulation and exclusion of excess carriers observed in inhomogeneous germanium samples;Semiconductor Science and Technology;1996-01-01
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