Modifications of EL2 related stable and metastable defects in semi-insulating GaAs by high energy light ion irradiation
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Interdefect correlation during thermal recovery ofEL2in semi-insulating GaAs: Proposal of a three-center-complex model
2. Arsenic-antisite defect in GaAs: Multiplicity of charge and spin states
3. EL2-related metastable defects in semi-insulating GaAs
4. Donor-Acceptor Pair as Opposed to Anion Antisite Metastability in Bulk Semi-Insulating GaAs: Electron Paramagnetic Resonance and Photoconductivity Data Analysis
5. Metastable transformation of EL2 in semi‐insulating GaAs: The role of the actuator level and the photoionization of EL2
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of high-energy light-ion irradiation on SI-GaAs and GaAs:Cr as observed by Raman spectroscopy;Journal of Raman Spectroscopy;2011-08-12
2. Defect engineering in GaAs using high energy light ion irradiation: Role of electronic energy loss;Journal of Applied Physics;2011-02
3. Raman scattering by two-phonons and fractons in irradiated GaAs;Solid State Communications;2010-10
4. Modification of charge compensation in semi-insulating semiconductors by high energy light ion irradiation;Journal of Applied Physics;2008-03
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