The impact of Hf metal pre-deposition on the physical and electrical properties of ultrathin HfO2films on Si0.9954C0.0046/Si heterolayers-Reference-Cited by-同舟云学术

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The impact of Hf metal pre-deposition on the physical and electrical properties of ultrathin HfO2films on Si0.9954C0.0046/Si heterolayers

Published:2005-09-02 Issue:10 Volume:20 Page:1016-1021
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Liu K C,Maikap S,Wu C H,Chang Y S,Chen P S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. A hp22 nm node low operating power (LOP) technology with sub-10 nm gate length planar bulk CMOS devices

2. Performance comparison and channel length scaling of strained Si FETs on SiGe-on-Insulator (SGOI)

3. High electron and hole mobility enhancements in thin-body strained Si/strained SiGe/strained Si heterostructures on insulator

4. Performance enhancement of partially- and fufly-depleted strained-SOI MOSFETs and characterization of strained-Si device parameters

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. XPS and depth resolved SXES study of HfO2/Si interlayers;Journal of Electron Spectroscopy and Related Phenomena;2010-08

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