Models of Si-SiO2interface reactions
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/4/i=12/a=003/pdf
Reference54 articles.
1. Chemistry of Si‐SiO2interface trap annealing
2. Surface states at steam-grown silicon-silicon dioxide interfaces
3. Characterization of Surface States at the Si-SiO[sub 2] Interface Using the Quasi-Static Technique
4. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
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