Highly strained Esaki tunnel diodes on InP substrate with type-III band alignment
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/31/i=12/a=125008/pdf
Reference16 articles.
1. Modeling of tunnel junctions for high efficiency solar cells
2. Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting Lasers
3. Waveguide-Based Type-II Heterostructure Photodiode on InAs Substrate With Broad Wavelength Range Photoresponse
4. Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
5. Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes
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