The sign of electrong-factor in GaAs1−xNxmeasured by using the Hanle effect-Reference-Cited by-同舟云学术

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The sign of electrong-factor in GaAs1−xNxmeasured by using the Hanle effect

Published:2008-10-29 Issue:11 Volume:23 Page:114008
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kalevich V K,Ivchenko E L,Shiryaev A Yu,Afanasiev M M,Egorov A Yu,Ikezawa M,Masumoto Y

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. Bowing parameter of the band-gap energy of GaNxAs1−x

3. Gas-source MBE of GaInNAs for long-wavelength laser diodes

4. Determination of strain-induced valence-band splitting in GaAsN thin films from circularly polarized photoluminescence

5. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

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1. Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field;Chinese Physics B;2011-08

2. Optical orientation and spin-dependent recombination in GaAsN alloys under continuous-wave pumping;Journal of Physics: Condensed Matter;2010-11-05

3. Determination of the sign of g factors for conduction electrons using time-resolved Kerr rotation;Applied Physics Letters;2010-04-12

4. Anisotropic spin dynamics of confined electrons in CdTe/ZnTe quantum structures;Physical Review B;2010-03-12

5. Electron spin filtering by thin GaNAs/GaAs multiquantum wells;Applied Physics Letters;2010-02

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