Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy-Reference-Cited by-同舟云学术

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Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy

Published:2001-08-10 Issue:9 Volume:16 Page:L53-L56
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Theys B,Teukam Z,Jomard F,Mierry P de,Polyakov A Y,Barbé M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films

2. Hydrogenation of GaN, AlN, and InN

3. Hydrogenation ofp‐type gallium nitride

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the plasma experimental parameters on the dose and profiles of hydrogen in-diffused into the GaN/AlGaN/GaN/Si high electron mobility transistor;Materials Science and Engineering: B;2023-04

2. The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors;Acta Physica Polonica A;2019-12

3. Role of Hydrogen in the CVD of Wide Bandgap Nitride Semiconductors;Chemical Vapor Deposition;2010-12

4. Changes induced in electrical properties and deep level spectra of p‐AlGaN films by treatment in hydrogen plasma and by proton implantation;physica status solidi (c);2005-04-11

5. Effects of hydrogen plasma treatment on electrical properties of p-AlGaN;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

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