DX centre characterization in Se-doped AlGaAs under hydrostatic pressure-Reference-Cited by-同舟云学术

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DX centre characterization in Se-doped AlGaAs under hydrostatic pressure

Published:1992-06-01 Issue:6 Volume:7 Page:758-766
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Calleja E,Garcia F,Romero A L,Munoz E,Powell A L,Rockett P I,Button C C,Roberts J S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=6/a=007/pdf

Reference59 articles.

1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors

2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs

3. The sulfur‐related trap in GaAs1−xPx

4. Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detailed electrical characterization ofDXcenters in Se-doped AlxGa1−xAs;Journal of Applied Physics;1997-11

2. Optical investigation of theDXcenters in GaAs under hydrostatic pressure;Physical Review B;1995-06-15

3. On the spectroscopy of DX centres by transient techniques at constant capacitance;Semiconductor Science and Technology;1995-01-01

4. A critical analysis of capacitance transient signals due to DX centres in n-type AlGaAs;Semiconductor Science and Technology;1993-07-01

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