Local-environment dependence of the DX centre in GaAlAs: alloy and superlattice studies-Reference-Cited by-同舟云学术

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Local-environment dependence of the DX centre in GaAlAs: alloy and superlattice studies

Published:1991-10-01 Issue:10B Volume:6 Page:B58-B61
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Contreras S,Mosser V,Piotrzkowski R,Lorenzini P,Sicart J,Jeanjean P,Robert J L,Zawadzki W

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=10B/a=011/pdf

Reference11 articles.

1. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

2. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys

3. The Vacancy-Interstitial Model of DX Centers

4. Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction

5. Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced electron density in two Si δ-doped Al0.33Ga0.67As/GaAs heterojunctions;Microelectronics Journal;1999-08

2. Improvement of the electron density in the channel of an AlGaAs/GaAs heterojunction by introducing Si δ doping in the quantum well;Journal of Applied Physics;1999-06-15

3. Physics of GaAs-AlAs superlattices under pressure application to sensors;PHYS STATUS SOLIDI B;1999

4. Persistent photoconductivity at elevated temperatures inCd1−xMnxTe:In;Physical Review B;1997-09-15

5. Emission energies of Si-DX centers in various AlGaAs microstructures;Journal of Physics and Chemistry of Solids;1995-03

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