Modification of electrical characteristics of indium tin oxide/p-InP heterostructures by rapid thermal annealing
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. High efficiency indium tin oxide/indium phosphide solar cells
2. High‐efficiency indium tin oxide/indium phosphide solar cells
3. Investigation of buried homojunctions in p‐InP formed during sputter deposition of both indium tin oxide and indium oxide
4. The influence of indium tin oxide deposition on the transport properties at InP junctions
5. Electrical characterization of ITO/p‐InP heterostructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates;Renewable Energy;2000-06
2. Thermal Stability of Indium Tin Oxide/n-GaAs Heterostructures with and without Sulfur Passivation;physica status solidi (a);2000-04
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