Electrical and optical properties of a quantum-well infrared phototransistor
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. A new infrared detector using electron emission from multiple quantum wells
2. Device physics of quantum well infrared photodetectors
3. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
4. Injection mechanism at contacts in a quantum‐well intersubband infrared detector
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1. Performance evaluation of quantum well infrared phototransistor instrumentation through modeling;Optical Engineering;2014-05-09
2. Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors;Journal of Applied Physics;2014-02-14
3. Sensing Infrared and Terahertz Regions by Functional Films;Functional Thin Films and Nanostructures for Sensors;2009
4. Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectors;Semiconductor Science and Technology;2003-10-01
5. Theory of quantum well IR photodetectors with tunnelling electron injection;IEE Proceedings - Optoelectronics;1997-10-01
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