Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 µm-Reference-Cited by-同舟云学术

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Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 µm

Published:2006-05-30 Issue:7 Volume:21 Page:886-889
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chen I-Liang,Hsu Wei-Chou,Lee Tsin-Dong,Su Ke-Hua,Chiou Chih-Hung,Lin Gray

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Index-Guide GaInNAs Laser Diode for Optical Communications

3. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

4. Physics and characteristics of high performance 1200 nm InGaAs and 1300–1400 nm InGaAsN quantum well lasers obtained by metal–organic chemical vapour deposition

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