Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre silicon structures-Reference-Cited by-同舟云学术

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Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre silicon structures

Published:1996-06-01 Issue:6 Volume:11 Page:865-872
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Starikov E,Shiktorov P,Gruzinskis V,González T,Martín M J,Pardo D,Reggiani L,Varani L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Semiconductor device modelling

2. Calculation of velocity overshoot in submicron devices using an augmented drift-diffusion model

3. Physics-based electron device modelling and computer-aided MMIC design

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Maximum entropy principle and hydrodynamic models in statistical mechanics;RIV NUOVO CIMENTO;2012

2. Hydrodynamic simulation of electron transport in n-type Hg0.8Cd0.2Te;The European Physical Journal B;2008-03

3. Maximum-entropy principle for static and dynamic high-field transport in semiconductors;Physical Review B;2006-06-15

4. Transfer-field methods for electronic noise in submicron semiconductor structures;La Rivista del Nuovo Cimento;2001-09

5. The transient signal response of submicron vertical silicon field effect transistors;Semiconductor Science and Technology;2001-03-14

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