Optically detected cyclotron resonance measurements in Al0.48In0.52As MBE layers-Reference-Cited by-同舟云学术

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Optically detected cyclotron resonance measurements in Al0.48In0.52As MBE layers

Published:1989-07-01 Issue:7 Volume:4 Page:590-592
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wright M G,Kana'ah A,Cavenett B C,Johnson G R,Davey S T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/4/i=7/a=018/pdf

Reference19 articles.

1. Optical detection of cyclotron resonance in GaP and ZnTe

2. New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band‐edge discontinuity

3. Optically detected cyclotron resonance in a GaAs/Ga0.67Al0.33As superlattice

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1. Fundamentals of EPR Related Methods;Magnetic Resonance of Semiconductors and Their Nanostructures;2017

2. Interaction of Microwave Heated Hot Carriers with Recombination Centers;Materials Science Forum;2002-01

3. Band parameters for III–V compound semiconductors and their alloys;Journal of Applied Physics;2001-06

4. Feasibility of optically detected cyclotron resonance to study electron mobility in ultrapure GaAs;Physical Review B;2000-09-15

5. Photoluminescence of molecular beam epitaxial grown Al0.48In0.52As;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-05

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