Low frequency noise in Schottky barrier contacts of titanium nitride on n-type silicon-Reference-Cited by-同舟云学术

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Low frequency noise in Schottky barrier contacts of titanium nitride on n-type silicon

Published:1998-11-01 Issue:11 Volume:13 Page:1284-1289
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Farmakis F V,Brini J,Mathieu N,Kamarinos G,Dimitriadis C A,Logothetidis S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Properties and microelectronic applications of thin films of refractory metal nitrides

2. Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs

3. Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems

4. Titanium silicide and titanium nitride formation by titanium-ion implantation for MOS LSI applications

5. The effects of ion bombarding energy on the structure and properties of TiN films synthesized by dual ion beam sputtering

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1. Nanoscale Mapping of Carrier Mobilities in the Ballistic Transports of Carbon Nanotube Networks;ACS Nano;2022-11-17

2. Influence of C2F6Addition to Cl2/Ar Gas on Nanometer-Scale Etch Characteristics of TiN Thin Films Using Inductively Coupled Plasma;ECS Journal of Solid State Science and Technology;2018

3. High performance InGaZnO-based Schottky diodes fabricated at room temperature;physica status solidi (c);2016-06-03

4. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes;Applied Physics Letters;2015-08-31

5. Suppression of Interface-Induced Noise by the Control of Electron-Phonon Interactions;IEEE Transactions on Nuclear Science;2013-08

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