A comparative study of numerical and analytical methods of simulating inhomogeneous Schottky diode characteristics
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
2. Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurements
3. Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions
4. Barrier inhomogeneities at Schottky contacts
5. On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes
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3. Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts;TURKISH JOURNAL OF PHYSICS;2020-08-31
4. Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0.2Ga0.8N/GaN heterostructures;Journal of Physics and Chemistry of Solids;2019-09
5. A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H–SiC Schottky contact;Indian Journal of Physics;2019-02-08
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