Reversible UV induced metal–semiconductor transition in In2O3thin films prepared by autowave oxidation-Reference-Cited by-同舟云学术

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Reversible UV induced metal–semiconductor transition in In2O3thin films prepared by autowave oxidation

Published:2014-06-01 Issue:8 Volume:29 Page:082001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Tambasov Igor A,Maygkov Victor G,Tarasov Anton S,Ivanenko Alexander A,Bykova Liudmila E,Nemtsev Ivan V,Eremin Evgeny V,Yozhikova Ekaterina V

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=8/a=082001/pdf

Reference57 articles.

1. High mobility transparent conducting oxides for thin film solar cells

2. Phase stability, electronic structure, and optical properties of indium oxide polytypes

3. Transparent conductors as solar energy materials: A panoramic review

4. Conductivity in transparent oxide semiconductors

5. Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors

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