Models of GaSb/InAs type-II infrared detectors at very long wavelengths: band offsets and interface bonds
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devices
3. Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials
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1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique;East European Journal of Physics;2023-09-04
2. Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories;Frontiers in Physics;2022-04-14
3. First-Principles Study of InAs/GaSb Semiconductor Superlattice Structures;Journal of Computational and Theoretical Nanoscience;2013-08-01
4. Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3–5μm spectral region;Physica E: Low-dimensional Systems and Nanostructures;2005-07
5. Optimization of mid-infrared InAs∕GaSb type-II superlattices;Applied Physics Letters;2004-06-28
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