Hot-electron luminescence from GaAs in a magnetic field-Reference-Cited by-同舟云学术

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Hot-electron luminescence from GaAs in a magnetic field

Published:1994-05-02 Issue:5 Volume:9 Page:1042-1046
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hackenberg W,Meseguer F,Phillips R T,Hughes H P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=5/a=006/pdf

Reference19 articles.

1. Continuous-wave spectroscopy of femtosecond carrier scattering in GaAs

2. Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley Scattering

3. Polar optic phonon and Γ→Lintervalley scattering times in GaAs from steady‐state hot‐electron luminescence spectroscopy

4. Carrier-carrier scattering in GaAs: Quantitative measurements from hot (e,A0) luminescence

5. Hot electron scattering with cold plasma in GaAs from CW hot electron luminescence spectroscopy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Methods;Semiconductor Optics;2012

2. Experimental Methods;Semiconductor Optics

3. 2.6 References for 2;Landolt-Börnstein - Group III Condensed Matter

4. 2.3 Time-resolved spectroscopy;Landolt-Börnstein - Group III Condensed Matter

5. Experimental Methods;Semiconductor Optics

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