Hot-phonon temperature and lifetime in biased boron-implanted SiO2/Si/SiO2channels-Reference-Cited by-同舟云学术

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Hot-phonon temperature and lifetime in biased boron-implanted SiO2/Si/SiO2channels

Published:2006-05-03 Issue:6 Volume:21 Page:803-807
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Liberis J,Matulioniene I,Matulionis A,Lemme M C,Kurz H,Först M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Silicon Device Scaling to the Sub-10-nm Regime

2. Nonequilibrium Phonons in Semiconductors

3. The birth of a quasiparticle in silicon observed in time–frequency space

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling current transport in boron-doped diamond at high electric fields including self-heating effect;Diamond and Related Materials;2020-11

2. Impact of the hot phonon effect on electronic transport in monolayer silicene;Journal of Physics D: Applied Physics;2018-09-03

3. Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene;Journal of Physics D: Applied Physics;2017-07-10

4. Hot-electron energy relaxation time in Ga-doped ZnO films;Journal of Applied Physics;2015-02-14

5. Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors;Semiconductor Science and Technology;2013-06-21

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