Resonance effect in inter-sub-band transitions of single quantum wells-Reference-Cited by-同舟云学术

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Resonance effect in inter-sub-band transitions of single quantum wells

Published:1987-09-01 Issue:9 Volume:2 Page:582-586
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Babiker M,Chamberlain M P,Ridley B K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Longitudinal polar optical modes in semiconductor quantum wells

2. Effective-mass eigenfunctions in superlattices and their role in well-capture

3. Scattering by polar-optical phonons in a quasi-two-dimensional semiconductor

4. Polar optical interface phonons and Fröhlich interaction in double heterostructures

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrons and Phonons in Semiconductor Multilayers;2009

2. Quantum-well capture and interwell transport in semiconductor active layers;Semiconductor Science and Technology;1999-01-01

3. Optical-phonon emission in GaAs/AlAs multiple-quantum-well structures determined by hot-electron luminescence;Physical Review B;1995-11-15

4. Calculation of Coulomb-mediated carrier-capture times;Physical Review B;1994-05-15

5. Optical modes in GaAs/AlAs superlattices;Physical Review B;1993-11-15

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