Polarization properties of InAs/InGaAsP/InP quantum dot stacks
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
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4. Growth of InAs/InP-based quantum dots for 1.55μm laser applications
5. External-cavity quantum-dot laser tunable through 1.55μm
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1. Impact of Excited States Transitions on Polarization Property of InAs/InP Quantum Dots;IEEE Journal of Quantum Electronics;2022-02
2. Experimental and theoretical study of thermally activated carrier transfer in InAs/GaAs multilayer quantum dots;Applied Physics A;2020-06-05
3. Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots;Japanese Journal of Applied Physics;2020-02-17
4. Wide-wavelength-range control of photoluminescence polarization in closely stacked InAs/GaAs quantum dots;Journal of Applied Physics;2019-06-21
5. Understanding the electric field control of the electronic and optical properties of strongly-coupled multi-layered quantum dot molecules;Nanoscale;2015
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