Combined oscillations of magnetoresistance due to inelastic and elastic scatterings in InAs/AlGaSb quantum well structures-Reference-Cited by-同舟云学术

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Combined oscillations of magnetoresistance due to inelastic and elastic scatterings in InAs/AlGaSb quantum well structures

Published:1998-02-01 Issue:2 Volume:13 Page:181-184
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Osako Shin-ichi,Hamano Takafumi,Yamasaki Kiyotaka,Moriyasu Katsuji,Mori Nobuya,Hamaguchi Chihiro,Sasa Shigehiko,Inoue Masataka

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Electronic properties of two-dimensional systems

2. The magnetophonon effect in III-V semiconducting compounds

3. The magnetophonon effect

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction;Journal of Applied Physics;2012-12

2. Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure;Solid State Communications;2004-01

3. Absence of magneto-intersubband scattering inn-type HgTe quantum wells;Physical Review B;2002-01-08

4. Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells;Physical Review B;2001-05-03

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