Effect of post annealing on the band gap of MgxZn1−xO thin films-Reference-Cited by-同舟云学术

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Effect of post annealing on the band gap of MgxZn1−xO thin films

Published:2008-01-25 Issue:3 Volume:23 Page:035002
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Jiang D Y,Shen D Z,Liu K W,Shan C X,Zhao Y M,Yang T,Yao B,Lu Y M,Zhang J Y

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Recent advances in ZnO materials and devices

2. Biexciton emission from ZnO/Zn0.74Mg0.26O multiquantum wells

3. Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors

4. Structural and optical properties of MgxZn1−xO thin films prepared by the sol–gel method

5. MgxZn1−xO as a II–VI widegap semiconductor alloy

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1. Improved performance of MgxZn1-xO flexible UV photodetectors by piezo-phototronic effect through alloying treatment;Optics & Laser Technology;2025-02

2. Wide band gap tuning of Mg doped ZnO thin films for optoelectronic applications.;IOP Conference Series: Materials Science and Engineering;2024-04-01

3. Improved Performance of Mgxzn1-Xo Flexible Uv Photodetectors by Piezo-Phototronic Effect Through Alloying Treatment;2024

4. Annealing Temperature-Dependent Structural, Optical, and Electrical Properties of [(Ba_1−zCa_z)(Zr_0.1Ti_0.9)O₃], (z = 0.155), Films;ECS Journal of Solid State Science and Technology;2023-02-01

5. Optical properties and current conduction in annealed (Ta2O5)0.94 – (TiO2)0.06 thin films;Superlattices and Microstructures;2021-10

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