Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx-Reference-Cited by-同舟云学术

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Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx

Published:2008-02-21 Issue:3 Volume:23 Page:035031
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Tang Hengjing,Wu Xiaoli,Xu Qinfei,Liu Hongyang,Zhang Kefeng,Wang Yang,He Xiangrong,Li Xue,Gong Hai Mei

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

2. Electrical properties of the SiNx/InP interface passivated using H2S

3. Soft x‐ray photoemission characterization of the H2S exposed surface ofp‐InP

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Fixed Charges at Interface Between InP and Bonding Layer on Heterogeneous Integration of InP HEMTs;IEEE Transactions on Electron Devices;2021-05

2. Interfacial X‐ray photospectrometry study of In 0.53 Ga 0.47 As under different passivation treatments for metal oxide semiconductor field effect transistor devices;Micro & Nano Letters;2013-11

3. Advantages and disadvantages of sulfur passivation of InAs/GaSb superlattice waveguide photodiodes;Semiconductor Science and Technology;2009-05-15

4. Interfacial electronic structure of a hybrid organic-inorganic optical upconverter device: The role of interface states;Journal of Applied Physics;2009-04-15

5. Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric;Applied Physics Letters;2009-01-26

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