Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress-Reference-Cited by-同舟云学术

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Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress

Published:2000-08-09 Issue:9 Volume:15 Page:888-891
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yaung D N,Fang Y K,Huang K C,Chen C Y,Wang Y J,Hung C C,Wuu S G,Liang M S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. On/off current ratio in P-channel poly-Si MOSFETs: dependence on hot-carrier stress conditions

2. Physical models for degradation effects in polysilicon thin-film transistors

3. Hot-carrier effects in Hydrogen-passivated p-channel polycrystalline-Si MOSFET's

4. The anomalous behavior of hydrogenated/unhydrogenated polysilicon thin-film transistors under electric stress

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot Carrier Effect and Tunneling Effect of Location- and Orientation-Controlled (100)- and (110)-Oriented Single-Grain Si TFTs Without Seed Substrate;IEEE Transactions on Electron Devices;2011-01

2. Reliability of (100) and (110) oriented single-grain Si TFTs without seed substrate;2010 IEEE International Reliability Physics Symposium;2010

3. Effects of Electrical Bias Stress on the Performance of ZnO-Based TFTs Fabricated by RF Magnetron Sputtering;Journal of The Electrochemical Society;2006

4. Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors;Microelectronics Reliability;2004-09

5. Gate/drain bias-induced degradation effects in TFTs fabricated in unhydrogenated SPC polycrystalline silicon films;Thin Solid Films;2003-02

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