Negative transconductance in parallel conducting systems controlled by device geometry and magnetic field-Reference-Cited by-同舟云学术

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Negative transconductance in parallel conducting systems controlled by device geometry and magnetic field

Published:1996-04-01 Issue:4 Volume:11 Page:483-488
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Millard I S,Patel N K,Linfield E H,Rose P D,Simmons M Y,Ritchie D A,Jones G A C,Pepper M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Resistance resonance in coupled potential wells

2. Resonant resistance enhancement in double-quantum-well GaAs-AlxGa1−xAs heterostructures

3. Large transconductances observed in an independently contacted coupled double quantum well

4. New functional field-effect transistor based on wavefunction modulation in δ-doped double quantum wells

5. Exchange effect in coupled two‐dimensional electron gas systems

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2. Charge trapping in a double quantum well system;Journal of Physics: Condensed Matter;2008-10-13

3. Effect of gating on the transport properties of aSi4cluster;Physical Review B;2006-01-12

4. Quantized acoustoelectric current in the presence of large tunneling counterflow;Physical Review B;2004-12-30

5. Probing the Fermi surfaces of coupled double quantum wells in the presence of an in-plane magnetic field;Journal of Physics: Condensed Matter;1997-02-03

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