Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor-Reference-Cited by-同舟云学术

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Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor

Published:1998-06-01 Issue:6 Volume:13 Page:630-633
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wang W-C,Cheng S-Y,Chang W-L,Pan H-J,Shie Y-H,Liu W-C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Heterostructure bipolar transistors and integrated circuits

2. Consideration of the frequency performance potential of GaAs homojunction and heterojunction n-p-n transistors

3. A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure

4. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy

5. Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of an InGaP/GaAs/InGaAs Step-Emitter Bipolar Transistor;2006 Conference on Optoelectronic and Microelectronic Materials and Devices;2006-12

2. Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch;Semiconductor Science and Technology;2005-01-06

3. NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTs;Selected Topics in Electronics and Systems;2005

4. NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTs;International Journal of High Speed Electronics and Systems;2004-09

5. Comprehensive study of InGaP–Al[sub x]Ga[sub 1−x]As–GaAs composite-emitter heterojunction bipolar transistors with different thickness of Al[sub x]Ga[sub 1−x]As graded layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

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