Silicon germanium based millimetre-wave ICs for Gbps wireless communications and radar systems-Reference-Cited by-同舟云学术

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Silicon germanium based millimetre-wave ICs for Gbps wireless communications and radar systems

Published:2006-12-08 Issue:1 Volume:22 Page:S236-S243
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Gaucher B,Floyd B,Reynolds S,Pfeiffer U,Grzyb J,Joseph A,Mina E,Orner B,Ding H,Wachnik R,Walter K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

2. SiGe bipolar technology with 3.9 ps gate delay

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2. An efficient beam-training scheme for the optimally designed subarray structure in mmWave LoS MIMO systems;EURASIP Journal on Wireless Communications and Networking;2017-02-14

3. SiGe for Radiation Hardening: Spearheading Electronic Warfare in Space;Signals and Communication Technology;2016-10-20

4. SiGe HBT mm-Wave DC Coupled Ultra-wide-band Low Noise Monolithic Amplifiers;Proceedings of the 27th Symposium on Integrated Circuits and Systems Design - SBCCI '14;2014

5. Indoor Millimeter Wave MIMO: Feasibility and Performance;IEEE Transactions on Wireless Communications;2011-12

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